The Snapdragon 835 is expected to power the flagship and premium smartphones of 2017.
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The Snapdragon 835 SoC will be “in focus” in CES 2017, says Qualcomm in a tweet. Manufactured on Samsung’s 10nm FINFET process, the SoC is expected to power the flagship and premium smartphones of 2017. The 10nm process theoretically brings lower power consumption with better performance, and the Snapdragon 835 should, on paper, deliver at least 27 percent better performance, with 40 percent lesser power consumption, compared to the Snapdragon 821 or 820.
Further, the Snapdragon 835 will support Quick Charge 4.0, which is Qualcomm’s newest fast charging technology. According to Qualcomm, this technology is capable of delivering 5 hours of battery life in 5 minutes of charge. The company says that a typical smartphone battery will be charged to 50 percent in 15 minutes. However, not much is known about how the new technology differs from Quick Charge 3.0.
The Snapdragon 835 will be accompanied by the Adreno 540 GPU, which is reportedly 30 percent faster than the Adreno 530 that is used in the Snapdragon 821. Qualcomm, though, hasn’t confirmed the choice of GPU or its clock speed, yet. This may be one of the things that is revealed at CES 2017.
Further, Qualcomm may reveal new devices, or at least the OEMs manufacturing them, at CES 2017. While the Samsung Galaxy S8 and LG G6 are widely expected to carry the Snapdragon 835 SoC, Chinese OEMs, like Xiaomi, LeEco and OnePlus should also be using it for their next smartphones.
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